PNP SILICON EPITAXIAL TRANSISTOR
ISSUED DATE :2005/08/18 REVISED DATE :2005/11/21B
GLBCX53
Description
P N P S I L I C O N E P I TA X I A L T R A N S I...
Description
ISSUED DATE :2005/08/18 REVISED DATE :2005/11/21B
GLBCX53
Description
P N P S I L I C O N E P I TA X I A L T R A N S I S T O R
The GLBCX53 is designed for use in driver stages of audio amplifiers and medium power general purpose amplification.
Features
Package Dimensions
Collector-Emitter Voltage: VCEO=-80V Complementary to GLBCP56
SOT-223
REF. A C D E I H
Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35
REF. B J 1 2 3 4 5
Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Range Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Total Power Dissipation Symbol Ratings
http://www.DataSheet4U.net/
Unit
Tj TsTG VCBO VCEO VEBO IC PD )
+150 -65 ~ +150 -100 -80 -5 1 1.5
V V V A W
Electrical Characteristics (Ta = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VBE(on) *hFE1 *hFE2 *hFE3 fT Min. -100 -80 -5 63 63 40 100 Typ. Max. -100 -100 -500
Unit V V V nA nA mV mV IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC =0
Test Conditions
IC=-500mA, IB=-50mA IC=-500mA, VCE=-2V, VCE=-2V, IC=-5mA VCE=-2V, IC=-150mA VCE=-2V, IC=-500mA
-1000 250 -
MHz
VCE=-5V, IC=-10mA, f=100MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Classification Of hFE2
Rank Range A 63 - 160 B 100 - 250
GLBCX53
1/2
datasheet pdf - http://www.DataSheet4U.net/
ISSUED D...
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