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AON1605 Dataheets PDF



Part Number AON1605
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 20V P-Channel MOSFET
Datasheet AON1605 DatasheetAON1605 Datasheet (PDF)

AON1605 20V P-Channel MOSFET General Description The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) -20V -0.7A < 710mΩ < 930mΩ < 1250mΩ Typical ESD protection HBM Class 1C DFN 1.0x0.6 Top View Bottom View G S D G D D http://www.DataSheet4U.net/ S Absolute Maximum Ratings TA=25° C unless otherwi.

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AON1605 20V P-Channel MOSFET General Description The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) -20V -0.7A < 710mΩ < 930mΩ < 1250mΩ Typical ESD protection HBM Class 1C DFN 1.0x0.6 Top View Bottom View G S D G D D http://www.DataSheet4U.net/ S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current E Pulsed Drain Current Power Dissipation A C Maximum -20 ±8 -0.7 -0.55 -2 0.9 0.55 -55 to 150 Units V V A A W ° C VGS C TA=25° TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B Symbol t ≤ 10s Steady-State t ≤ 10s Steady-State RθJA RθJA Typ 80 110 200 280 Max 100 140 245 340 Units ° C/W ° C/W ° C/W ° C/W Rev 0 : Oct. 2012 www.aosmd.com Page 1 of 5 datasheet pdf - http://www.DataSheet4U.net/ AON1605 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V C TJ=55° VDS=0V, VGS=±8V VDS=VGS, ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-0.4A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-0.3A VGS=-1.8V, ID=-0.2A VGS=-1.5V, ID=-0.1A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-0.4A IS=-0.4A,VGS=0V -0.4 -2 590 835 745 955 1115 1 -0.85 -1.2 -0.7 50 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 12 7.5 45 0.75 VGS=-4.5V, VDS=-10V, ID=-0.4A http://www.DataSheet4U.net/ Min -20 Typ Max Units V STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 ±10 -0.7 -1.1 710 1010 930 1250 µA µA V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns Maximum Body-Diode Continuous Current E DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Total Gate Charge Qg Qgs Qgd tD(on) tr tD(off) tf Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=-4.5V, VDS=-10V, RL=25Ω, RGEN=3Ω 0.15 0.2 6 5 22 8 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. B. The value of R θJA is measured with the device mounted on FR-4 minimum pad board, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. C. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. D. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. E. The maximum current limited by package. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Oct. 2012 www.aosmd.com Page 2 of 5 datasheet pdf - http://www.DataSheet4U.net/ AON1605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 -8V -3V -4V -4.5V -2.5V 1.5 2 VDS=-5V 1.5 -ID (A) -ID(A) 1 -2.0V 1 0.5 VGS=-1.5V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1400 1200 RDS(ON) (mΩ ) 1000 800 600 VGS=-4.5V 400 0 0.3 0.4 0.5 0.6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0.1 0.2 VGS=-1.5V VGS=-1.8V Normalized On-Resistance 0.5 125°C 25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.6 VGS=-2.5V ID=-6A VGS=-1.8V ID=-5A 1.4 1.2 VGS=-2.5V VGS=-4.5V 5 ID=-8A VGS=-4.5V ID=-8A 17 1 2 10 0.8 0 http://www.DataSheet4U.net/ 25 50 75 100 125 150 175 0 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 1600 ID=-0.4A 1400 1200 RDS(ON) (mΩ ) 125°C -IS (A) 1000 800 600 400 200 0 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 2 25°C 1.0E+01 1.0E+00 40 1..


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