2N6430 2N6431 NPN 2N6432 2N6433 PNP
COMPLEMENTARY SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:...
2N6430 2N6431
NPN 2N6432 2N6433
PNP
COMPLEMENTARY SILICON
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6430 series devices are complementary small signal silicon
transistors manufactured by the epitaxial planar process, designed for high voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage (
NPN) Emitter-Base Voltage (
PNP) Continuous Collector Current Power Dissipation (TC=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCBO VCEO VEBO VEBO IC PD PD TJ, Tstg ΘJA ΘJC
2N6430 2N6432
200
2N6431 2N6433
300
200 300
6.0
5.0
100
1.8
500
-65 to +200
0.35
97.2
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N6430
2N6431
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=160V (2N6430, 2N6432)
- 100
ICBO
VCB=200V (2N6431, 2N6433)
- 100
IEBO
VEB=4....
