K2917

2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2917 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain–source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.21 Ω (typ.) : |Yfs| = 17 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain–source voltage Drain–gate voltage (RGS = 20 kΩ) Gate–source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 18 72 90 915 18 9 150 −55 to 150 http://www.DataSheet4U.net/ Unit V V V A W mJ A mJ °C °C Pulse (Note 1) Drain power dissipation (Ta = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-16F1B Weight: 5.8 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i...