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N-Channel MOSFET. UTN3055 Datasheet

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N-Channel MOSFET. UTN3055 Datasheet






UTN3055 MOSFET. Datasheet pdf. Equivalent




UTN3055 MOSFET. Datasheet pdf. Equivalent





Part

UTN3055

Description

N-Channel MOSFET



Feature


UNISONIC TECHNOLOGIES CO., LTD UTN3055 1 2A, 25V N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UTN3055 is N-channe l logic level enhancement mode field ef fect transistor.  SYMBOL 2.Drain Po wer MOSFET 1.Gate 3.Source  ORDER ING INFORMATION Ordering Number Lead Free Halogen Free UTN3055L-TN3-R UTN 3055G-TN3-R Note: Pin Assignment: G: G ate D: Drain S: Source .
Manufacture

UTC

Datasheet
Download UTN3055 Datasheet


UTC UTN3055

UTN3055; Package TO-252 Pin Assignment 1 2 3 GDS Packing Tape Reel  MARKING w ww.unisonic.com.tw Copyright © 2019 Un isonic Technologies Co., Ltd 1 of 5 QW -R502-138.C UTN3055 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, un less otherwise specified) PARAMETER S YMBOL RATINGS UNIT Drain-Source Volt age Gate-Source Voltage Continuous Drai n Current Pulsed Drain C.


UTC UTN3055

urrent (Note 1) Repetitive Avalanche Ene rgy (L=0.05mH, Duty Cycle≦1%) VDSS V GSS ID IDM EAR 25 V ±20 V 12 A 45 A 3 mJ Power Dissipation PD 43 W Junction Temperature TJ +150 ° C Storage Temperature TSTG -55 ~ +15 0 °C Note: Absolute maximum ratings are those values beyond which the devic e could be permanently damaged. Absolu te maximum ratings are .


UTC UTN3055

stress ratings only and functional devic e operation is not implied.  THERMA L DATA PARAMETER Junction-to-Ambient J unction-to-Case SYMBOL θJA θJC RATI NGS 60 2.6  ELECTRICAL CHARACTERIST ICS (TC=25°C, unless otherwise specifi ed) UNIT °C/W °C/W PARAMETER SYMBO L TEST CONDITIONS MIN OFF CHARACTERI STICS Drain-Source Breakdown Voltage Dr ain-Source Leakage Current .

Part

UTN3055

Description

N-Channel MOSFET



Feature


UNISONIC TECHNOLOGIES CO., LTD UTN3055 1 2A, 25V N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UTC UTN3055 is N-channe l logic level enhancement mode field ef fect transistor.  SYMBOL 2.Drain Po wer MOSFET 1.Gate 3.Source  ORDER ING INFORMATION Ordering Number Lead Free Halogen Free UTN3055L-TN3-R UTN 3055G-TN3-R Note: Pin Assignment: G: G ate D: Drain S: Source .
Manufacture

UTC

Datasheet
Download UTN3055 Datasheet




 UTN3055
UNISONIC TECHNOLOGIES CO., LTD
UTN3055
12A, 25V N-CHANNEL
ENHANCEMENT MODE
DESCRIPTION
The UTC UTN3055 is N-channel logic level enhancement
mode field effect transistor.
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTN3055L-TN3-R
UTN3055G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-252
Pin Assignment
1
2
3
GDS
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-138.C




 UTN3055
UTN3055
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Repetitive Avalanche Energy
(L=0.05mH, Duty Cycle1%)
VDSS
VGSS
ID
IDM
EAR
25
V
±20
V
12
A
45
A
3
mJ
Power Dissipation
PD
43
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
θJA
θJC
RATINGS
60
2.6
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
BVDSS VGS=0V, ID=250uA
25
IDSS
VDS=20V, VGS=0V
IGSS
VDS=0V, VGS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250uA
0.8
On-State Drain Current (Note 2)
ID(ON) VDS=10V, VGS=10V
12
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=10V, ID=12A
VGS=5V, ID=12A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall Time
CISS
COSS
CRSS
VGS=0V,VDS=15V, f=1.0MHz
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VDS=15V, VGS=10V, ID=6A
VDS=15V, VGS=10V,
ID12A, RG=2.5, RL=1
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current (Note 1)
ISM
Drain-Source Diode Forward Voltage(Note2)
VSD
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width 300us, duty cycle 2%.
IF=IS, VGS=0V
TYP
1.2
50
70
450
200
60
15
2.0
7.0
6.0
6.0
20
5.0
MAX UNIT
V
25 uA
±250 nA
2.5 V
A
90 m
120 m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
12 A
45 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-138.B




 UTN3055
UTN3055
TYPICAL CHARACTERISTICS
On-Resistance Variation with
10
Temperature
9 TJ=25
VGS=10V
8V
8
7
4.5V
6
5
3.0V
4
3
2.5V
2
1
2.0V
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Drain-to-Source Voltage, VGS (V)
0.2
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0
On-Resistance vs. Gate-to-Source
Voltage
ID=2.5A
1 2 3 4 5 6 7 8 9 10
Gate-to-Source Voltage,VGS(V)
Power MOSFET
Transfer Characteristics
10
9 VDS10V
8
7
6
5
4
TJ=100
3
25
2
-55
1
0
2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8 4
Gate-to-Source Voltage,VGS (V)
0.0425
On-Resistance vs. Drain Current and
Gate Voltage
TJ=25
0.04
0.0375
0.035
0.0325
0.03
0 1 2 3 4 5 6 7 8 9 10
Drain Current,ID (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-138.B






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