DatasheetsPDF.com

Power Amplifier. CHA3080-98F Datasheet

DatasheetsPDF.com

Power Amplifier. CHA3080-98F Datasheet






CHA3080-98F Amplifier. Datasheet pdf. Equivalent




CHA3080-98F Amplifier. Datasheet pdf. Equivalent





Part

CHA3080-98F

Description

71 ~ 76 GHz Medium Power Amplifier



Feature


CHA3080-98F 71-76GHz Medium Power Ampli fier GaAs Monolithic Microwave IC Descr iption The CHA3080-98F is a three-stage monolithic Medium Power Amplifier. Thi s circuit includes a power detector whi ch integrates a directional coupler, a detection diode and a reference diode t o be used in differential mode. It is d edicated to E-band telecommunication, p articularly well s.
Manufacture

UMS

Datasheet
Download CHA3080-98F Datasheet


UMS CHA3080-98F

CHA3080-98F; uited for the new generation of high cap acity Backhaul. The circuit is manufact ured with a pHEMT process, 0.1µm gate length, via holes through the substrate , air bridges and electron beam gate li thography. It is available in chip form with BCB layer protection. Vd1 Vd2h Vg3h Vd3h IN OUT Vg1 Vg2 Vd2b Vg3 b Vd3b Vdet Dc Vref Functional diagra m ■ Broadband perf.


UMS CHA3080-98F

ormances: 71-76GHz ■ 16dB linear gain ■ 19dBm power at 1dB compression ■ 20dB power detector dynamic range ■ B CB layer protection ■ DC bias: Vd=3.5 V@Id=280mA ■ Chip size 3.96x1.78x0.07 mm Pout @ 1dB comp & 3dB comp (dBm) M ain Features http://www.DataSheet4U.ne t/ 22 20 18 Output Power (dBm) and Li near Gain (dB) 26 24 Linear Gain (dB) 22 Pout @ 1dB comp Pout @ 3dB.


UMS CHA3080-98F

comp Linear Gain 20 18 16 14 12 69 70 7 1 72 73 74 75 Frequency (GHz) 76 77 78 79 16 14 12 10 8 Main Electrical Char acteristics Tamb.= +25°C Symbol Parame ter Freq Frequency range Gain Linear Ga in P1dB Output Power @1dB comp. Psat Sa turated Output Power Detection dynamic range (for output power Dr detection up to Psat) Ref. : DSCHA30802335 - 30 Nov 12 1/12 Min 71 T.

Part

CHA3080-98F

Description

71 ~ 76 GHz Medium Power Amplifier



Feature


CHA3080-98F 71-76GHz Medium Power Ampli fier GaAs Monolithic Microwave IC Descr iption The CHA3080-98F is a three-stage monolithic Medium Power Amplifier. Thi s circuit includes a power detector whi ch integrates a directional coupler, a detection diode and a reference diode t o be used in differential mode. It is d edicated to E-band telecommunication, p articularly well s.
Manufacture

UMS

Datasheet
Download CHA3080-98F Datasheet




 CHA3080-98F
CHA3080-98F
71-76GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3080-98F is a three-stage
monolithic Medium Power Amplifier. This
circuit includes a power detector which
integrates a directional coupler, a detection
diode and a reference diode to be used in
differential mode.
It is dedicated to E-band telecommunication,
particularly well suited for the new generation
of high capacity Backhaul.
The circuit is manufactured with a pHEMT
process, 0.1µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form with BCB layer
protection.
Vd1
IN
Vg1
Vd2h
Vd3h
Vg3h
OUT
Vg2 Vg3b
Vd2b
Vd3b
Vdet
Vref
Dc
Functional diagram
Main Features
Broadband performances: 71-76GHz
16dB linear gain
19dBm power at 1dB compression
20dB power detector dynamic range
BCB layer protection
DC bias: Vd=3.5V@Id=280mA
Chip size 3.96x1.78x0.07mm
http://www.DataSheet4U.net/
22
Output Power (dBm) and Linear Gain (dB)
26
20 24
18 22
Pout @ 1dB comp
16
Pout @ 3dB comp
20
14 Linear Gain
18
12 16
10 14
8 12
69 70 71 72 73 74 75 76 77 78 79
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
71 76 GHz
Gain Linear Gain
16 dB
P1dB Output Power @1dB comp.
19 dBm
Psat Saturated Output Power
21 dBm
Dr Detection dynamic range (for output power
detection up to Psat)
20
dB
Ref. : DSCHA30802335 - 30 Nov 12
1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
datasheet pdf - http://www.DataSheet4U.net/




 CHA3080-98F
CHA3080-98F
71-76GHz Medium Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = Dc = 3.5V, Id (quiescent) = 280mA
Symbol
Parameter
Freq
Frequency range
Gain
Linear Gain
P1dB
Output power @ 1dB compression
Psat
Saturated Output Power
Dr Detection dynamic range (for output
power detection up to Psat)
Vdetect
Voltage detection Vref-Vdet up to
Psat
Min
71
RLin
RLout
Gain ctrl
NF
Vd1, Vd2h, Vd3h,
Vd2b, Vd3b
Id
Vg1, Vg2, Vg3b,
Vg3h
Dc
IDc
Input Return Loss
Output Return Loss
Gain control range with Vg1&Vg2
tuning (with Vd fixed at 3.5V)
Noise Figure
Drain supply voltage
Supply quiescent current
Gate supply voltage
Detector supply voltage
Detector bias current
http://www.DataSheet4U.net/
Typ
16
19
21
20
50
to
1400
12
12
10
4.0
3.5
280
0.15
3.5
240
Max
76
Unit
GHz
dB
dBm
dBm
dB
mV
dB
dB
dB
dB
V
mA
V
V
µA
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports but with 10kΩ resistor in parallel on pads Vdet and Vref.
A ribbon (75µm wide) connection at the input and the output of the MMIC amplifier (See
chapter recommended chip assembly) should improve the performances.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage
4V V
Id Drain bias current
350 mA
Vg Gate bias voltage
-2 to +0.4
V
Pin Maximum continuous input power
+12 dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Ref. : DSCHA30802335 - 30 Nov 12
2/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
datasheet pdf - http://www.DataSheet4U.net/




 CHA3080-98F
71-76GHz Medium Power Amplifier
CHA3080-98F
Typical on-wafer Sij parameters
Tamb.= +25°C, Vd = Dc = 3.5V, Id (quiescent) = 280mA
Freq
(GHz)
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
93
94
95
S11
(dB)
-2.46
-2.15
-2.08
-2.11
-2.24
-2.46
-2.70
-2.97
-3.10
-4.00
-4.79
-5.95
-7.25
-12.65
-15.54
-18.12
-21.43
-23.63
-18.57
-14.93
-14.01
-11.98
-10.37
-8.42
-5.87
-4.00
-4.09
-5.32
-6.17
-7.18
-8.67
-9.94
-11.29
-12.33
-13.22
-13.92
-14.52
-15.11
-14.60
-13.52
-12.99
PhS11
(°)
132.0
130.4
124.3
117.7
109.3
100.8
93.3
80.9
59.9
37.4
13.9
-3.8
-50.7
-125.9
167.5
116.8
105.4
138.6
150.3
142.7
124.4
115.7
102.9
88.3
68.3
36.6
0.4
-27.5
-53.8
-76.6
-97.1
-116.1
-131.7
-148.4
-162.5
-175.1
169.6
154.1
141.8
125.1
102.5
S21
(dB)
-18.06
-14.57
-10.74
-6.58
-3.93
-1.3
1.51
3.03
5.28
7.81
11.13
14.36
16.74
18.02
17.96
17.84
17.31
16.86
16.32
15.79
15.19
15.05
15.43
15.76
15.85
13.32
8.78
3.04
-1.89
-6.21
-10.46
-13.65
-15.77
-18.17
-19.99
-21.67
-23.45
-25.76
-28.46
-30.15
-30.87
PhS21
(°)
88.2
64.0
45.9
16.0
-17.5
-49.8
-84.4
-112.9
-144.3
-176.8
151.2
111.5
61.9
5.0
-44.2
-89.5
-132.3
-172.1
145.1
104.0
66.1http://www.DataSheet4U.net/
29.2
-12.2
-59.2
-114.1
-178.6
127.1
83.7
53.5
26.8
5.8
-12.5
-35.6
-56.9
-81.0
-109.9
-140.9
-174.2
151.7
119.1
49.4
S12
(dB)
-38.27
-46.79
-47
-56.14
-48.75
-44.01
-47.31
-48.68
-44.74
-58.68
-46.69
-43.75
-39.35
-37.08
-36.92
-37.08
-37.51
-38.17
-39.03
-39.58
-40.28
-39.71
-39.19
-38.74
-38.67
-40.65
-45.06
-50.27
-52.02
-51.33
-52.71
-52.42
-50.5
-48.64
-49.99
-49.76
-48.91
-48.04
-47.25
-43.54
-36.3
PhS12
(°)
-59.1
-110.3
-90.7
173.2
-83.7
179.0
-144.5
-148.7
147.4
41.4
-106.8
-70.0
-109.3
-155.6
165.9
130.1
95.1
56.3
15.9
-22.7
-58.2
-96.2
-135.3
-176.8
135.9
81.3
31.7
-31.9
-136.3
149.9
100.1
90.9
36.0
-30.4
-117.4
179.0
148.2
113.4
86.4
74.3
6.8
S22
(dB)
-3.1
-3.86
-5.15
-8.11
-13.05
-18.18
-12.31
-8.32
-6.44
-5.04
-4.4
-2.98
-5.84
-5.06
-9.55
-8.88
-11.49
-16.38
-20.6
-25.62
-24.88
-25.01
-24.05
-23.41
-24.16
-13.51
-9.22
-7.24
-6.7
-6.31
-6.34
-6.78
-6.32
-6.31
-6.47
-6.82
-7.47
-8.69
-10.51
-14.36
-14.84
PhS22
(°)
154.1
136.3
120.0
96.1
55.6
-34.7
-109.5
-135.7
-155.0
-175.9
168.1
154.8
114.3
95.4
81.9
53.1
30.3
-29.7
-72.6
-167.6
140.9
38.3
21.1
-22.1
37.4
21.1
-24.3
-49.4
-73.0
-91.1
-105.9
-115.8
-126.7
-138.3
-150.8
-164.2
-178.6
163.1
136.2
83.5
-18.6
Ref. : DSCHA30802335 - 30 Nov 12
3/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
datasheet pdf - http://www.DataSheet4U.net/






Recommended third-party CHA3080-98F Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)