CHA3080-98F

CHA3080-98F 71-76GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3080-98F is a three-stage monolithic Medium Power Amplifier. This circuit includes a power detector which integrates a directional coupler, a detection diode and a reference diode to be used in differential mode. It is dedicated to E-band telecommunication, particularly well suited for the new generation of high capacity Backhaul. The circuit is manufactured with a pHEMT process, 0.1µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form with BCB layer protection. Vd1 Vd2h Vg3h Vd3h IN OUT Vg1 Vg2 Vd2b Vg3b Vd3b Vdet Dc Vref Functional diagram ■ Broadband performances: 71-76GHz ■ 16dB linear gain ■ 19dBm power at 1dB compression ■ 20dB power detector dynamic range ■ BCB layer protection ■ DC bias: Vd=3.5V@Id=280mA ■ Chip size 3.96x1.78x0.07mm Pout @ 1dB comp & 3dB comp (dBm) Main Features http://www.DataSheet4U.net/ 22 20 18 Output Power (dBm) and Linear Gain (dB) 26 24 Linear Gain (dB) 22 Pout @ 1dB comp Pout @ 3dB comp Linear Gain 20 18 16 14 12 69 70 71 72 73 74 75 Frequency (GHz) 76 77 78 79 16 14 12 10 8 Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P1dB Output Power @1dB comp. Psat Saturated Output Power Detection dynamic range (for output power Dr detection up to Psat) Ref. : DSCHA30802335 - 30 Nov 12 1/12 Min 71 Typ 16 19 21 20 Max ...