SI4483ADY

P-Channel 30 V (D-S) MOSFET Si4483ADY Vishay Siliconix PRODUCT SUMMARY VDS (V) - 30 RDS(on) () 0.0088 at VGS = - 10 V 0.0153 at VGS = - 4.5 V ID (A)d - 19.2 - 14.6 Qg (Typ.) 44.8 nC S1 S2 S3 G4 SO-8 8D 7D 6D 5D FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Adaptor Switch G Top View Ordering Information: Si4483ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C ID TA = 25 °C Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C IS TA = 25 °C IAS L = 0.1 mH EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C PD TA = 25 °C Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg D P-Channel MOSFET Limit - 30 ± 25 - 19.2 - 15.4 - 13.5a, b - 10.9a, b - 70 - 4.9 - 2.4a, b 20 20 5.9 3.8 2.9a, b 1.9a, b - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 85 °C/W. d. Based on TC = 25 °C. t 10 s Steady State Document Number: 68982 S10-2543-Rev. B, 08-Nov-10 Symb...