PT4410

PT4410 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 10.5mΩ RDS(ON), [email protected], Ids@12A = 15mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions D D D D 8 7 6 5 1 2 S S 3 4 S G http://www.DataSheet4U.net/ REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Symbol Limit Unit VDS VGS ID IDM TA = 25 C o o 30 ± 20 12 48 2.5 1.2 -55 to 150 150 25 50 o V A Maximum Power Dissipation Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance (PCB mounted) TA = 75 C PD TJ, Tstg EAS RθJC RθJA W o C mJ C/W 1 JinYu semiconductor www.htsemi.com datasheet pdf - http://www.DataSheet4U.net/ Date:2011/05 PT4410 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Dynamic Total G...