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Datasheet No - PD97468 March 23, 2010
IR11662S
ADVANCED SMART RECTIFIER TM CONTROL IC Features
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Product Summary
Flyback, Resonant Half-bridge 200V 10.7V Clamped +1A & -4A 60ns (typical) 50ns (typical)
Secondary side high speed SR controller Topology DCM, CrCM flyback and Resonant half-bridge topologies 200V proprietary IC technology VD Max 500KHz switching frequency VOUT Anti-bounce logic and UVLO protection 4A peak turn off drive current Io+ & I o- (typical) Micropower start-up & ultra low quiescent current Turn on Propagation 10.7V gate drive clamp Delay 50ns turn-off propagation delay Vcc range from 11.3V to 20V Turn off Propagation Direct sensing of MOSFET drain voltage Delay Enable function synchronized with MOSFET VDS transition Cycle by Cycle MOT Check Circuit prevents multiple Package Options false trigger GATE pulses Lead-free Compatible with 0.3W Standby, Energy Star, CECP, etc.
Typical Applications
• LCD & PDP TV, Telecom SMPS, AC-DC adapters, ATX SMPS, Server SMPS
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8-Lead SOIC
Typical Connection Diagram
Vin
Rs XFM Cs Ci 1 2 3 RMOT 4
Rdc
U1 VCC OVT MOT EN VGATE GND VS VD 8
Cdc
6 5 Rg
Co
IR11671 IR11662S
Rtn
Q1
*Please note that this datasheet contains advance information that could change before the product is released to production.
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IR11662S
Table of Contents
Description Qualification Information Absolute Maximum Ratings Electrical Characteristics Functional Block Diagram Input/Output Pin Equivalent Circuit Diagram Lead Definitions Lead Assignments Application Information and Additional Details Package Details Tape and Reel Details Part Marking Information Ordering Information
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3 4 5 6 8 9 10 10 12 22 23 24 25
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IR11662S
Description
IR11662 is a smart secondary-side driver IC designed to drive N-Channel power MOSFETs used as synchronous rectifiers in isolated Flyback and resonant half-bridge converters. The IC can control one or more paralleled N-MOSFETs to emulate the behavior of Schottky diode rectifiers. The drain to source voltage is sensed differentially to determine the polarity of the current and turn the power switch on and off in proximity of the zero current transition. The cycle-by-cycle MOT protection circuit can automatically detect no load condition and turn off gate driver output to avoid negative current flowing through the MOSFETs. Ruggedness and noise immunity are accomplished using an advanced blanking scheme and double-pulse suppression which allow reliable operation in all operating modes.
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IR11662S
Qualification Information†
Qualification Level Industrial†† Comments: This family of ICs has passed JEDEC’s Industrial qualification. IR’s Consumer qualification level is granted by extension of the higher Industrial level. MSL2††† 260°C (per IPC/JEDEC J-STD-020) Class B (per JEDEC standard JESD22-A115) Class 1C (1500V) (per EIA/JEDEC standard EIA/JESD22-A114) Class I, Level A (per JESD78) Yes
Moisture Sensitivity Level Machine Model ESD Human Body Model IC Latch-Up Test RoHS Compliant † ††
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information. ††† Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information.
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IR11662S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Parameters Supply Voltage Enable Voltage Cont. Drain Sense Voltage Pulse Drain Sense Voltage Source Sense Voltage Gate Voltage Operating Junction Temperature Storage Temperature Thermal Resistance Package Power Dissipation Switching Frequency Symbol VCC VEN VD VD VS VGATE TJ TS R JA PD fsw Min. -0.3 -0.3 -1 -5 -3 -0.3 -40 -55 Max. 20 20 200 200 20 20 150 150 128 970 500 Units V V V V V V °C °C °C/W mW kHz Remarks
VCC=20V, Gate off
SOIC-8 SOIC-8, TAMB=25°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions. Symbol Definition VCC Supply voltage VD Drain Sense Voltage Junction Temperature TJ Fsw Switching Frequency .