DATA SHEET
SILICON POWER TRANSISTOR
2SA1744
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1744 is ...
DATA SHEET
SILICON POWER
TRANSISTOR
2SA1744
PNP SILICON EPITAXIAL
TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1744 is a power
transistor developed for high-speed switching and features a high hFE at Low VCE(sat). This
transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.
PACKAGE DRAWING (UNIT: mm)
FEATURES
High hFE and low VCE(sat): hFE ≥ 100 (VCE = −2 V, IC = −3 A) VCE(sat) ≤ 0.3 V (IC = −8 A, IB = −0.4 A) Full-mold package that does not require an insulating board or bushing
http://www.DataSheet4U.net/
Electrode Connection 1. Base 2. Collector 3. Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings −100 −60 −7.0 −15 −30 −7.5 30 2.0 150 −55 to +150 Unit V V V A A A W W °C °C
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
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