2SA1742

DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. ORDERING INFORMATION Part No. 2SA1742 Package Isolated TO-220 (Isolated TO-220) FEATURES High hFE and low VCE(sat): hFE ≥ 100 MIN. @VCE = −2.0 V, IC = −1.5 A VCE(sat) ≥ −0.3 V MAX. @IC = −4.0 V, IB = −0.2 A Full-mold package that does not require an insulating board or bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25°C TA = 25°C PW ≤ 300 µs, duty cycle ≤ 10% Conditions Ratings −100 −60 −7.0 −7.0 −14 −3.5 30 2.0 150 −55 to +150 Unit http://www.DataSheet4U.net/ V V V A A A W W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D1...