2SA1740

SMD Type High-Voltage Driver Applications 2SA1740 Transistors Features High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity. Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC * Tj Tstg http://www.DataSheet4U.net/ Rating -400 -400 -5 -200 -400 1.3 150 -55 to +150 Unit V V V mA mA W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time Symbol ICBO IEBO Testconditons VCB = -300V , IE = 0 VEB = -4V , IC = 0 -400 -400 -5 60 200 -0.8 -1.0 70 5 4 0.25 5.0 V V MHz pF pF ìs Min Typ Max -0.1 -0.1 Unit A A V V V V(BR)CBO IC = -10uA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10uA , IC = 0 hFE VCE = -10V , IC = -50mA VCE(sat) IC = -50mA , IB = -5mA VBE(sat) IC = -50mA , IB = -5mA fT Cob Cre ton toff VCE = -30V , IC = -10mA VCB = -30V , IE = 0 , f = 1MHz VCB = -30V , IE = 0 , f = 1MHz See Test Circuit. www.kexin.com.cn 1 datasheet pdf - http://www.DataSheet4U.net/ SMD ...