SSM9620M

SSM9620M P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance Capable of 2.5V drive Fast switching Simple drive requirement D D D D BVDSS R DS(ON) G -20V 20mΩ -9.5A ID SO-8 S S S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D G S The SSM9620M is supplied in the SO-8 package, which is widely preferred for commercial and industrial surface-mount applications. This device is well suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1,2 3 3 http://www.DataSheet4U.net/ Rating - 20 ±12 -9.5 -7.6 -76 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit °C/W Rev.2.02 3/06/2004 www.SiliconStandard.com 1 of 6 datasheet pdf - http://www.DataSheet4U.net/ SSM9620M Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol BVDSS ∆ BV DSS/∆ T j Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -20 -0.037 20 35 -1 -1 -25 ±100 - V V/°C mΩ mΩ V...