N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP73T03AGH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fa...
Description
AP73T03AGH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 9.5mΩ 50A
S
Description
AP73T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
G D S
TO-252(H)
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
http://www.DataSheet4U.net/
Rating 30 +20 50 31.7 120 41.6
Units V V A A A W W ℃ ℃
Total Power Dissipation Total Power Dissipation
3
2 -55 to 150 -55 to 150
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount) 3
Value 3 62.5
Units ℃/W ℃/W 1 201301291
Data & specifications subject to change without notice
datasheet pdf - http://w...
Similar Datasheet