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IRGP4640DPbF Dataheets PDF



Part Number IRGP4640DPbF
Manufacturers International Rectifier
Logo International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet IRGP4640DPbF DatasheetIRGP4640DPbF Datasheet (PDF)

VCES = 600V IC = 40A, TC = 100°C IRGP4640DPbF IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.60V @ IC = 24A G E n-channel GC E TO-247AC IRGP4640DPbF GC E TO-247AD IRGP4640D-EP Applications • Industrial Motor Drive • Inverters • UPS • Welding Features Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA .

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VCES = 600V IC = 40A, TC = 100°C IRGP4640DPbF IRGP4640D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C C tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.60V @ IC = 24A G E n-channel GC E TO-247AC IRGP4640DPbF GC E TO-247AD IRGP4640D-EP Applications • Industrial Motor Drive • Inverters • UPS • Welding Features Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant G Gate C Collector E Emitter Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Base part number IRGP4640DPbF IRGP4640D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable part number IRGP4640DPbF IRGP4640D-EPbF Absolute Maximum Ratings Parameter Max. Units VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current e Pulse Collector Current, VGE = 15V c Clamped Inductive Load Current, VGE = 20V Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage 600 V 65 40 72 96 A 65 40 96 ±20 V ±30 PD @ TC = 25°C PD @ TC = 100°C TJ TST G Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. 250 W 125 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal Resistance RJC (IGBT) RJC (Diode) RCS RJA Parameter f Junction-to-Case (IGBT) f Junction-to-Case (Diode) Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount) Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– Max. 0.60 1.62 ––– 40 Units °C/W 1 www.irf.com © 2012 International Rectifier January 8, 2013 IRGP4640DPbF/IRGP4640D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES Parameter Collector-to-Emitter BreakdownVoltage Min. Typ. Max. Units Conditions 600 — — d V VGE = 0V, IC = 100μA V(BR)CE S/T J T emperatureCoeff. of B reakdownVoltage — 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C) — 1.60 1.90 IC = 24A, VGE = 15V, TJ = 25°C VCE(on) Collector-to-Emitter Saturation Voltage — 1.90 — V IC = 24A, VGE = 15V, TJ = 150°C — 2.00 — IC = 24A, VGE = 15V, TJ = 175°C VGE(th) VGE(th)/T J Gate Threshold Voltage Threshold Voltage temp. coefficient 4.0 — 6.5 V VCE = VGE, IC = 700μA — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) gfe Forward Transconductance — 17 — S VCE = 50V, IC = 24A, PW = 80μs ICES Collector-to-Emitter Leakage Current — 2.0 .


TAC785 IRGP4640DPbF IRGP4640D-EPbF


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