Document
VCES = 600V IC = 40A, TC = 100°C
IRGP4640DPbF IRGP4640D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
C
C
tSC 5μs, TJ(max) = 175°C VCE(on) typ. = 1.60V @ IC = 24A
G
E
n-channel
GC E
TO-247AC IRGP4640DPbF
GC E
TO-247AD IRGP4640D-EP
Applications • Industrial Motor Drive • Inverters • UPS • Welding
Features
Low VCE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant
G Gate
C Collector
E Emitter
Benefits
High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation
Enables short circuit protection scheme Environmentally friendly
Base part number
IRGP4640DPbF IRGP4640D-EPbF
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4640DPbF IRGP4640D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM
IF @ TC = 25°C IF @ TC = 100°C IFM VGE
Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current
e Pulse Collector Current, VGE = 15V c Clamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current Diode Continous Forward Current Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage
600
V
65
40
72
96
A
65
40
96
±20
V
±30
PD @ TC = 25°C PD @ TC = 100°C TJ TST G
Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
250
W
125
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
RJC (IGBT) RJC (Diode) RCS RJA
Parameter
f Junction-to-Case (IGBT) f Junction-to-Case (Diode)
Case-to-Sink (flat, greased surface) Junction-to-Ambient (typical socket mount)
Min. ––– ––– ––– –––
Typ. ––– ––– 0.24 –––
Max. 0.60 1.62 ––– 40
Units °C/W
1
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4640DPbF/IRGP4640D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
Parameter Collector-to-Emitter BreakdownVoltage
Min. Typ. Max. Units Conditions
600 —
—
d V VGE = 0V, IC = 100μA
V(BR)CE S/T J
T emperatureCoeff. of B reakdownVoltage
— 0.30 — V/°C VGE = 0V, IC = 1mA (25°C-175°C)
— 1.60 1.90
IC = 24A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.90 —
V IC = 24A, VGE = 15V, TJ = 150°C
— 2.00 —
IC = 24A, VGE = 15V, TJ = 175°C
VGE(th) VGE(th)/T J
Gate Threshold Voltage Threshold Voltage temp. coefficient
4.0 — 6.5
V VCE = VGE, IC = 700μA
—
-18
— mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
gfe
Forward Transconductance
—
17
—
S VCE = 50V, IC = 24A, PW = 80μs
ICES
Collector-to-Emitter Leakage Current
—
2.0
25
μA VGE = 0V, VCE = 600V
— 775 —
VGE = 0V, VCE = 600V, TJ = 175°C
VFM
Diode Forward Voltage Drop
— 1.80 2.6
V IF = 24A
— 1.28 —
IF = 24A, TJ = 175°C
IGES
Gate-to-Emitter Leakage Current
—
— ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
—
50
75
IC = 24A
Qge
Gate-to-Emitter Charge (turn-on)
—
13
20
nC VGE = 15V
Qgc
Gate-to-Collector Charge (turn-on)
—
21
31
VCC = 400V
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
— 115 201
IC = 24A, VCC = 400V, VGE = 15V
— 600 700 μJ RG = 10, L = 200μH, LS = 150nH, TJ = 25°C
Etotal
Total Switching Loss
— 715 901
E nergy los s es include tail & diode revers e recovery
td(on)
Turn-On delay time
—
41
53
IC = 24A, VCC = 400V, VGE = 15V
tr
Rise time
—
22
31
ns RG = 10, L = 200μH, LS = 150nH, TJ = 25°C
td(off)
Turn-Off delay time
tf
Fall time
— 104 115
—
29
41
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
— 420 —
IC = 24A, VCC = 400V, VGE=15V
— 840
—
μJ RG=10, L= 200μH, LS=150nH, TJ = 175°C
Etotal
Total Switching Loss
— 1260 —
E nergy los s es include tail & diode revers e recovery
td(on)
Turn-On delay time
tr
Rise time
—
40
—
IC = 24A, VCC = 400V, VGE = 15V
—
24
—
ns RG = 10, L = 200μH, LS = 150nH
td(off)
Turn-Off delay time
— 125 —
TJ = 175°C
tf
Fall time
—
39
—
Ci es
Input Capacitance
— 1490 —
pF VGE = 0V
Coes
Output Capacitance
— 129 —
VCC = 30V
Cres
Reverse Transfer Capacitance
—
45
—
f = 1.0Mhz
TJ = 175°C, IC = 96A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V Rg = 10, VGE = +20V to 0V
SCSOA
Short Circuit Safe Operatin.