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STATIC RAM. IS32WV204816B Datasheet

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STATIC RAM. IS32WV204816B Datasheet






IS32WV204816B RAM. Datasheet pdf. Equivalent




IS32WV204816B RAM. Datasheet pdf. Equivalent





Part

IS32WV204816B

Description

2M x 16 (32-Mbit) PSEUDO STATIC RAM



Feature


IS32WV204816B 2M x 16 (32-Mbit) PSEUDO S TATIC RAM ISSI MAY 2004 ® FEATURES • Access time: 70ns • TTL compatibl e inputs and outputs; tri-state I/O • Wide Power supply voltage: 2.2V to 3.6 V • CMOS Standby: 70µA (32-Mbit) • Deep Power Down Standby: 5µA (32-Mbit ) • Deep Power-Down Mode: Data Invali d • Page Operation Mode: Four Word Ac cess • Logic compatible with SRAM R.
Manufacture

ISSI

Datasheet
Download IS32WV204816B Datasheet


ISSI IS32WV204816B

IS32WV204816B; /W (WE) pin. • Industrial Temperature Range: -40oC to 85oC DESCRIPTION The I SSI IS32WV204816B is a high-performance CMOS Pseudo Static RAM, organized as 2 Meg x 16 bits. ISSI CMOS technology pro vides high density, high speed low powe r devices that features SRAM-like write timing. Data is written to memory cell s on the rising edge of the WE signal. With a page size of .


ISSI IS32WV204816B

4 words, the device has a page access op eration. The device also supports deep powerdown mode providing low-power stan dby. The IS32WV204816B is packaged in a 48-pin mini-BGA (6mm x 8mm). http://w ww.DataSheet4U.net/ FUNCTIONAL BLOCK D IAGRAM A0-A1 A2-A20 DECODER 2Mb x 16 MEMORY ARRAY VDD GND I/O DATA CIRCUIT I/O0-I/O15 COLUMN I/O UB LB CS1 CS2 WE OE CONTROL CI.


ISSI IS32WV204816B

RCUIT Copyright © 2004 Integrated Sili con Solution, Inc. All rights reserved. ISSI reserves the right to make change s to this specification and its product s at any time without notice. ISSI assu mes no liability arising out of the app lication or use of any information, pro ducts or services described herein. Cus tomers are advised to obtain the latest version of this de.

Part

IS32WV204816B

Description

2M x 16 (32-Mbit) PSEUDO STATIC RAM



Feature


IS32WV204816B 2M x 16 (32-Mbit) PSEUDO S TATIC RAM ISSI MAY 2004 ® FEATURES • Access time: 70ns • TTL compatibl e inputs and outputs; tri-state I/O • Wide Power supply voltage: 2.2V to 3.6 V • CMOS Standby: 70µA (32-Mbit) • Deep Power Down Standby: 5µA (32-Mbit ) • Deep Power-Down Mode: Data Invali d • Page Operation Mode: Four Word Ac cess • Logic compatible with SRAM R.
Manufacture

ISSI

Datasheet
Download IS32WV204816B Datasheet




 IS32WV204816B
IS32WV204816B
ISSI®
2M x 16 (32-Mbit) PSEUDO STATIC RAM
MAY 2004
FEATURES
• Access time: 70ns
• TTL compatible inputs and outputs; tri-state I/O
• Wide Power supply voltage: 2.2V to 3.6V
• CMOS Standby: 70µA (32-Mbit)
• Deep Power Down Standby: 5µA (32-Mbit)
• Deep Power-Down Mode: Data Invalid
• Page Operation Mode: Four Word Access
• Logic compatible with SRAM R/W (WE) pin.
• Industrial Temperature Range: -40oC to 85oC
DESCRIPTION
The ISSI IS32WV204816B is a high-performance CMOS
Pseudo Static RAM, organized as 2Meg x 16 bits.
ISSI CMOS technology provides high density, high speed
low power devices that features SRAM-like write timing.
Data is written to memory cells on the rising edge of the WE
signal. With a page size of 4 words, the device has a page
access operation. The device also supports deep power-
down mode providing low-power standby.
The IS32WV204816B is packaged in a 48-pin mini-BGA
(6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
http://www.DataSheet4U.net/
A0-A1
A2-A20
VDD
GND
I/O0-I/O15
DECODER
I/O
DATA
CIRCUIT
2Mb x 16
MEMORY ARRAY
COLUMN I/O
UB
LB
CS1
CS2
WE
OE
CONTROL
CIRCUIT
Copyright © 2004 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
04/29/04
1
datasheet pdf - http://www.DataSheet4U.net/




 IS32WV204816B
IS32WV204816B
PIN CONFIGURATIONS
48-pin mini-BGA (M) (6mm x 8mm)
1 23 45 6
A A4 A17 UB CS2 A8 A12
B A3 A7 LB WE A9 A13
C A2 A6 A18 A20 A10 A14
D A1 A5 NC A19 A11 A15
E A0 I/O0 I/O2 I/O5 I/O7 A16
F CS1 I/O8 I/O10 I/O12 I/O14 NC
G OE I/O9 I/O11 VDD I/O13 I/O15
H GND I/O1 I/O3 I/O4 I/O6 GND
ISSI ®
48-pin mini-BGA (B) (6mm x 8mm)
1 23 45 6
A LB OE A0 A1 A2 CS2
B I/O8 UB A3 A4 CS1 I/O0
C I/O9 I/O10 A5
A6 I/O1 I/O2
D GND I/O11 A17 A7 I/O3 VDD`
E VDD I/O12 NC
A16 I/O4 GND
F I/O14 I/O13 A14 A15 I/O5 I/O6
G I/O15 A19 A12 A13 WE I/O7
H
A18 A8
A9 A10 A11 A20
PIN DESCRIPTIONS
A0-A20
Address Inputs
A0-A1
Page Address Inputs
I/O0 to I/O15 Data Input/Outputs
WE Write Enable
OE Output Enable
CS1 Chip Enable Input
CS2
LB, UB
Chip Select Input
Lower & Upper Data Byte Control Input
VDD Power
GND
Ground
NC No Connection
http://www.DataSheet4U.net/
2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
04/29/04
datasheet pdf - http://www.DataSheet4U.net/




 IS32WV204816B
IS32WV204816B
ISSI ®
TRUTH TABLE
Function
CS1 CS2 OE WE LB UB
ADD I/O0 to I/O7 I/O8 to I/O15 Power
Read: Word
L H L H LL
X X I/OOUT
I/OOUT
ICC1
Read: Lower Byte
L H L H LH
X X I/OOUT
HIGH-Z
ICC1
Read: Upper Byte
L H L H HL
X X HIGH-Z
I/OOUT
ICC1
Write: Word
L H X L LL
XX
DIN
DIN ICC1
Write: Lower
L H X L LH
XX
DIN
INVALID
ICC1
Write: Upper
L H X L HL
X X INVALID
DIN
ICC1
Outputs Disabled
L H H H XX
X X HIGH-Z
HIGH-Z
ISB
Standby
H H X X XX
X HIGH-Z
HIGH-Z
ISB
Deep Power-Down Standby H L X X X X
X HIGH-Z
HIGH-Z
ISB3
L = VIL, H =VIH, X = VIL or VIH, High-Z = High-impedance. XX = At CS1 falling edge, all addresses (A2 to A20) are valid "IN".
Page address signals (A0 and A1) must be VIH or VIL, during entire cycle.
http://www.DataSheet4U.net/
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
04/29/04
3
datasheet pdf - http://www.DataSheet4U.net/



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