N-Channel MOSFET
AP80N30W
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Hig...
Description
AP80N30W
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Lower On-resistance ▼ High Speed Switching G S D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
300V 66mΩ 88A
Description
AP80N30 from APEC provide the designer with the best combination of fast switching , low on-resistance and cost-effectiveness . The TO-3P package is preferred for commercial & industrial applications with higher power level preclusion than TO-220 device. G D
S
TO-3P
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ IDM IDR IDR(PULSE) PD@TC=25℃ IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Pulsed Drain Current
1
http://www.DataSheet4U.net/
Rating 300 ±30 88 270 88
1
Units V V A A A A W A mJ ℃ ℃
Body-Drain Diode Reverse Drain Current Body-Drain Diode Reverse Drain Peak Current Total Power Dissipation Avalanche Current
3 3
270 150 30 45 -55 to 150 150
Single Pulse Avalanche Energy Storage Temperature Range
Operating Junction Temperature
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 0.833 40 Units ℃/W ℃/W
Data and specifications subject to change without notice
1 200805132
datasheet pdf - http://www.DataSheet4U.net/
AP80N30W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Symbol VSD trr Qrr Parameter D...
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