FML20N50ES

http://www.fujisemi.com FML20N50ES Super FAP-E3 series Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TFP 4 0.6±0.2 Equivalent circuit schematic 9.0± 0.2 0.1 7.0± 0.2 0.4± 0.1 0.5 4 D 10.1±0.3 9.0±0.2 0.5±0.2 2.0 1.5 2.0 2.5 G 1 (10.1) (5.8) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 1 1.0±0.2 1.0±0.2 S1 2 3 S2 0.4±0.1 3.6±0.2 2.8±0.2 Solder Plating (2.2) (4.0) (3.2) (0.8) Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID I DP VGS IAR E AS E AR dV/dt -di/dt PD http://www.DataSheet4U.net/ Tch Tstg VISO Characteristics 500 500 ±20 ±80 ±30 20 582.5 9.5 4.6 100 2.16 95 150 -55 to + 150 2 (2.1) 2 3 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=...