Controlled Rectifiers. 2N6504 Datasheet

2N6504 Rectifiers. Datasheet pdf. Equivalent


ON Semiconductor 2N6504
2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half‐wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
Features
ăGlass Passivated Junctions with Center Gate Fire for Greater
Parameter Uniformity and Stability
ăSmall, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
ăBlocking Voltage to 800 Volts
ă300 A Surge Current Capability
ăPb-Free Packages are Available*
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SCRs
25 AMPERES RMS
50 thru 800 VOLTS
G
AK
MARKING
DIAGRAM
4
TO-220AB
CASE 221A
STYLE 3
2N650xG
AYWW
1
2
3
x = 4, 5, 7, 8 or 9
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Device
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2008
April, 2006 - Rev. 8
1
Publication Order Number:
2N6504/D


2N6504 Datasheet
Recommendation 2N6504 Datasheet
Part 2N6504
Description Silicon Controlled Rectifiers
Feature 2N6504; 2N6504 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed pr.
Manufacture ON Semiconductor
Datasheet
Download 2N6504 Datasheet




ON Semiconductor 2N6504
2N6504 Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
*Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C)
2N6504
2N6505
2N6507
2N6508
2N6509
VDRM,
VRRM
50
100
400
600
800
V
On‐State Current RMS (180° Conduction Angles; TC = 85°C)
IT(RMS)
25
A
Average On‐State Current (180° Conduction Angles; TC = 85°C)
IT(AV) 16 A
Peak Non‐repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C)
ITSM 250 A
Forward Peak Gate Power (Pulse Width 1.0 ms, TC = 85°C)
PGM
20 W
Forward Average Gate Power (t = 8.3 ms, TC = 85°C)
PG(AV) 0.5 W
Forward Peak Gate Current (Pulse Width 1.0 ms, TC = 85°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
*Thermal Resistance, Junction-to-Case
*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
Symbol
RqJC
TL
Max
1.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
*āPeak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
*āForward On-State Voltage (Note 2) (ITM = 50 A)
*āGate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 W)
TC = 25°C
TC = -40°C
*āGate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = -40°C)
āGate Non‐Trigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125°C)
*āHolding Current
TC = 25°C
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = -40°C
*āTurn‐On Time (ITM = 25 A, IGT = 50 mAdc)
āTurn‐Off Time (VDRM = rated voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off‐State Voltage (Gate Open, Rated VDRM, Exponential Waveform)
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
Symbol
IDRM,
IRRM
VTM
IGT
VGT
VGD
IH
tgt
tq
dv/dt
Min Typ Max
- - 10
- - 2.0
- - 1.8
- 9.0 30
- - 75
- 1.0 1.5
0.2 -
-
- 18 40
- - 80
- 1.5 2.0
- 15 -
- 35 -
- 50 -
Unit
mA
mA
V
mA
V
V
mA
ms
ms
V/ms
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ON Semiconductor 2N6504
2N6504 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
IRRM at VRRM
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode -
VTM
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
13
0
12
0
110
10
0
90
80
0
α = 30°
α
α = CONDUCTION ANGLE
60° 90°
180°
dc
32
24 α
α = CONDUCTION ANGLE 60°
α = 30°
16
90°
8.0
180°
dc
TJ = 125°C
4.0 8.0 12 16
IT(AV), ON‐STATE FORWARD CURRENT (AMPS)
Figure 1. Average Current Derating
20
0
0 4.0 8.0 12 16 20
IT(AV), AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
Figure 2. Maximum On-State Power Dissipation
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