2N6507

2N6504 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts 300 A Surge Current Capability Device Marking: Logo, Device Type, e.g., 2N6504, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating *Peak Repetitive Off–State Voltage (Note 1.) (Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C) 2N6504 2N6505 2N6507 2N6508 2N6509 On-State RMS Current (180° Conduction Angles; TC = 85°C) Average On-State Current (180° Conduction Angles; TC = 85°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C) Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 85°C) Forward Average Gate Power (t = 8.3 ms, TC = 85°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 85°C) Operating Junction Temperature Range Storage Temperature Range *Indicates JEDEC Registered Data 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that ...