30V Dual P-Channel MOSFET
AON4807
30V Dual P-Channel MOSFET
General Description
The AON4807 combines advanced trench MOSFET technology with a low...
Description
AON4807
30V Dual P-Channel MOSFET
General Description
The AON4807 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) -30V -4A < 68mΩ < 105mΩ
Top View
DFN 3x2A Bottom View S1 G1 S2 G2 Pin 1
D1 Top View
1 2 3 4 8 7 6 5
D2
D1 D1 D2 D2 G1 S1 G2 S2
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG
http://www.DataSheet4U.net/
Maximum -30 ±20 -4 -3 -18 1.9 1.2 -55 to 150
Units V V A
W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 51.5 82 37
Max 65 100 50
Units ° C/W ° C/W ° C/W
Rev 1: July 2012
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datasheet pdf - http://www.DataSheet4U.net/
AON4807
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS,ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-4A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A Forward Transconductance Diode Forward Voltage VDS...
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