STS1980N

Semiconductor Description STS1980N PNP Silicon Transistor General small signal amplifier Features Low collector saturation voltage : VCE(sat)=-0.3V(Max.) Low output capacitance : Cob=4pF(Typ.) Complementary pair with STS5343N Ordering Information Type NO. STS1980N Marking STS1980 Package Code TO-92N Outline Dimensions 4.20~4.40 4.20~4.40 unit : mm 2.25 Max. http://www.DataSheet4U.net/ 0.52 Max. 13.50~14.50 0.90 Max. 1.27 Typ. 2.14 Typ. 1 2 3 3.55 Typ 3.09~3.29 0.40 Max. PIN Connections 1. Emitter 2. Base 3. Collector KSD-T0C060-000 1 datasheet pdf - http://www.DataSheet4U.net/ STS1980N Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range (Ta=25°C) Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -50 -50 -5 -150 400 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCEO ICBO IEBO hFE VCE(sat) VBE fT Cob Test Condition IC=-1mA, IB=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-6V, IC=-2mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz http://www.DataSheet4U.net/ Min. Typ. Max. -50 120 -0.67 200 4 -0.1 -0.1 240 -0.3 -0.9 7 Unit V µA ...