BUK9Y3R0-40E

BUK9Y3R0-40E 12 February 2013 LF PA K N-channel 40 V 3.0 mΩ logic level MOSFET in LFPAK56 Product data sheet 1. General description Logic level N-channel MOSFET in LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C 3. Applications 12 V Automotive systems Motors, lighting and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching http://www.DataSheet4U.net/ 4. Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 5 V; Tmb = 25 °C; Fig. 1 Tmb = 25 °C; Fig. 2 VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 11 [1] Min - Typ - Max 40 100 194 Unit V A W Static characteristics drain-source on-state resistance gate-drain charge 2.47 3 mΩ Dynamic characteristics QGD VGS = 5 V; ID = 25 A; VDS = 32 V; Fig. 13; Fig. 14 [1] Continuous current is limited by package. - 10.7 - nC Scan or click this QR code to view the latest information for this product datasheet pdf - http://www.DataSheet4U.net/ NXP Semiconductors BUK9Y3R0-40E N-channel 40 V 3.0 mΩ...