DatasheetsPDF.com

RU6199 Dataheets PDF



Part Number RU6199
Manufacturers Ruichips Semiconductor
Logo Ruichips Semiconductor
Description N-Channel Advanced Power MOSFET
Datasheet RU6199 DatasheetRU6199 Datasheet (PDF)

RU6199 N-Channel Advanced Power MOSFET Features Pin Description · 60V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-220 TO-220F TO-263 TO-247 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings Symbol Parameter http://www.DataSheet4U.net/ N-Channel MOSFET Rating Unit Common Ratings (TA=25°C Unless.

  RU6199   RU6199



Document
RU6199 N-Channel Advanced Power MOSFET Features Pin Description · 60V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available Applications TO-220 TO-220F TO-263 TO-247 ·Automotive applications and a wide variety of other applications ·High Efficiency Synchronous in SMPS ·High Speed Power Switching Absolute Maximum Ratings Symbol Parameter http://www.DataSheet4U.net/ N-Channel MOSFET Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 60 ±25 175 -55 to 175 200 ① ② V °C °C A IS Mounted on Large Heat Sink IDP ID PD RθJC RθJA 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case Thermal Resistance-Junction to Ambient TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 800 200 140 380 220 A W 0.45 62.5 °C/W Drain-Source Avalanche Ratings EAS Avalanche Energy ,Single Pulsed Storage Temperature Range 1500 mJ -55 to 150 Copyright© Ruichips Semiconductor Co., Ltd Rev. A – JAN., 2010 www.ruichips.com datasheet pdf - http://www.DataSheet4U.net/ RU6199 Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ③ (TA=25°C Unless Otherwise Noted) RU6199 Parameter Test Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A 60 1 30 2 3 4 ±100 2.8 3.5 V µA V nA mΩ Diode Characteristics VSD trr qrr ③ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ④ ISD=40 A, VGS=0V ISD=40A, dlSD/dt=100A/µs 0.8 75 150 1.3 V ns nC Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ④ VGS=0V,VDS=0V,F=1MHz http://www.DataSheet4U.net/ 1.4 5800 1500 490 22 41 70 Ω VGS=0V, VDS= 30V, Frequency=1.0MHz pF VDD=35V, RL=35Ω, IDS= 1A, VGEN= 10V, RG=6Ω 38 75 120 ns 140 210 Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge ①Pulse width limited by safe operating area. ②Current limited by package( Limitation Current is 75A ) ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. 155 VDS=30V, VGS= 10V, IDS=40A 45 48 220 nC Copyright© Ruichips Semiconductor Co., Ltd Rev.A – JAN., 2010 2 www.ruichips.com datasheet pdf - http://www.DataSheet4U.net/ RU6199 Typical Characteristics Power Dissipation Drain Current ID - Drain Current (A) http://www.DataSheet4U.net/ Ptot - Power (W) Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) S.


P1203BV RU6199 HD66206


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)