Document
RU6199
N-Channel Advanced Power MOSFET
Features
Pin Description
· 60V/200A
RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V
·Avalanche Rated · Reliable and Rugged · Lead Free and Green Devices Available
Applications
TO-220
TO-220F
TO-263
TO-247
·Automotive applications and a wide
variety of other applications
·High Efficiency Synchronous in SMPS ·High Speed Power Switching
Absolute Maximum Ratings
Symbol Parameter
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N-Channel MOSFET
Rating Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS VGSS TJ TSTG Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current TC=25°C 60 ±25 175 -55 to 175 200
① ②
V °C °C A
IS
Mounted on Large Heat Sink
IDP ID PD RθJC RθJA 300µs Pulsed Drain Current Tested Continue Drain Current Maximum Power Dissipation Thermal Resistance -Junction to Case Thermal Resistance-Junction to Ambient
TC=25°C
TC=25°C TC=100°C TC=25°C TC=100°C
800
200 140 380 220
A
W
0.45 62.5
°C/W
Drain-Source Avalanche Ratings
EAS Avalanche Energy ,Single Pulsed Storage Temperature Range 1500 mJ
-55 to 150
Copyright© Ruichips Semiconductor Co., Ltd Rev. A – JAN., 2010
www.ruichips.com
datasheet pdf - http://www.DataSheet4U.net/
RU6199
Electrical Characteristics
Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON)
③
(TA=25°C Unless Otherwise Noted) RU6199
Parameter
Test Condition Min. Typ. Max.
Unit
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance
VGS=0V, IDS=250µA VDS= 60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=40A
60 1 30 2 3 4 ±100 2.8 3.5
V µA V nA mΩ
Diode Characteristics VSD
trr qrr
③
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
④
ISD=40 A, VGS=0V ISD=40A, dlSD/dt=100A/µs
0.8 75 150
1.3
V ns nC
Dynamic Characteristics RG Ciss Coss Crss td(ON) tr td(OFF) tf
Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time
④
VGS=0V,VDS=0V,F=1MHz
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1.4 5800 1500 490 22 41 70
Ω
VGS=0V, VDS= 30V, Frequency=1.0MHz
pF
VDD=35V, RL=35Ω, IDS= 1A, VGEN= 10V, RG=6Ω
38 75 120
ns 140 210
Gate Charge Characteristics Qg Qgs Qgd
Notes:
Total Gate Charge Gate-Source Charge Gate-Drain Charge
①Pulse width limited by safe operating area. ②Current limited by package( Limitation Current is 75A ) ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing.
155 VDS=30V, VGS= 10V, IDS=40A 45 48
220 nC
Copyright© Ruichips Semiconductor Co., Ltd Rev.A – JAN., 2010
2
www.ruichips.com
datasheet pdf - http://www.DataSheet4U.net/
RU6199
Typical Characteristics
Power Dissipation
Drain Current
ID - Drain Current (A)
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Ptot - Power (W)
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
S.