CPM2-1200-0080B

VDS 1200 V CPM2-1200-0080B Silicon Carbide Power MOSFET TM Z-FET MOSFET Features Package ID @ 25˚C 31.6 A RDS(on) 80 mΩ N-Channel Enhancement Mode High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies UPS http://www.DataSheet4U.net/ Part Number CPM2-1200-0080B Package Die Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Continuous Drain Current Value 31.6 20 60 -10/+25 -55 to +150 260 Unit A Test Conditions VGS@20 V, TC = 25˚C VGS@20 V, TC = 100˚C Note Note 1 IDS (DC) IDS (pulse) Pulsed Drain Current VGS TJ , Tstg TL Gate Source Voltage Operating Junction and Storage Temperature Solder Temperature A V ˚C ˚C Pulse width tP limited by Tjmax TC = 25˚C Note 1: Assumes a RθJC < 0.60 K/W f 1 CPM2-1200-0080B Rev. - datasheet pdf - http://www.DataSheet4U.net/ Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol V(BR)DSS VGS(th) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Min. 1200 1.7 1.2 Typ. 2.2 3.2 1.7 1 Max. Unit V Test Conditions VGS = 0 V, ID = 100 μA VDS = 10V, ID = 1 mA VDS = 10V, ID = 10 m...