SSM60T03GP

SSM60T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free, RoHS compliant. D BV DSS R DS(ON) ID 30V 12mΩ 45A G S DESCRIPTION The SSM60T03GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. This device is suitable for low-voltage applications such as DC/DC converters. The through-hole version, the SSM60T03GP in TO-220, is available for vertical-mounting, where a small footprint is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, permitting operation up to a maximum junction temperature of 175°C. G D S TO-263 (S) G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 http://www.DataSheet4U.net/ D TO-220(P) S Units V V A A A W W/°C Rating 30 ±20 45 32 120 44 0.352 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range -55 to 175 -55 to 175 °C °C THERMAL DATA Symbol RΘJC RΘJA Parameter Maximum Thermal Resistance Junction-case Maximum Thermal Resistance Junction-ambient Value 3.4 62 Units °C/W °C/W 9/16/2005 Rev.3.1 www.SiliconStandard.com 1 of 5 datasheet pdf - http://www.DataSheet4U.net/ SSM60T03GP,S ELECTRICAL CHARACTERISTICS (at Tj=25°C, unless otherwise...