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FDC655BN Datasheet, Equivalent, PowerTrench MOSFET.

PowerTrench MOSFET

PowerTrench MOSFET

 

 

 

Part FDC655BN
Description PowerTrench MOSFET
Feature FDC655BN Single N-Channel, Logic Level, PowerTrench® MOSFET April 2005 FDC65 5BN Single N-Channel, Logic Level, Powe rTrench® MOSFET Features ■ 6.
3 A, 30 V.
RDS(ON) = 25 mΩ @ VGS = 10 V RDS( ON) = 33 mΩ @ VGS = 4.
5 V ■ Fast sw itching ■ Low gate charge ■ High pe rformance trench technology for extreme ly low Rdson General Description This N-Channel Logic Level MOSFET is produce d using Fairchild Semiconductor’s adv anced PowerTrench process that has been especially tailored to minimized on-st ate resistance and yet maintain superio r switching performance.
These devices are well suited for low voltag .
Manufacture Fairchild Semiconductor
Datasheet
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Part FDC655BN
Description PowerTrench MOSFET
Feature FDC655BN Single N-Channel, Logic Level, PowerTrench® MOSFET April 2005 FDC65 5BN Single N-Channel, Logic Level, Powe rTrench® MOSFET Features ■ 6.
3 A, 30 V.
RDS(ON) = 25 mΩ @ VGS = 10 V RDS( ON) = 33 mΩ @ VGS = 4.
5 V ■ Fast sw itching ■ Low gate charge ■ High pe rformance trench technology for extreme ly low Rdson General Description This N-Channel Logic Level MOSFET is produce d using Fairchild Semiconductor’s adv anced PowerTrench process that has been especially tailored to minimized on-st ate resistance and yet maintain superio r switching performance.
These devices are well suited for low voltag .
Manufacture Fairchild Semiconductor
Datasheet
Download FDC655BN Datasheet

FDC655BN

FDC655BN
FDC655BN

FDC655BN

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