2N6548

2N6548 2N6549 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6548 series types are NPN silicon Darlington transistors designed for amplifier and driver applications where high gain at a high collector current is important. MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC IB PD PD TJ, Tstg ΘJA ΘJC ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=30V IEBO VEB=10V BVCBO lC=100μA BVCES lC=100μA BVEBO lE=10μA VCE(SAT) lC=1.0A, IB=2.0mA VCE(SAT) lC=2.0A, IB=4.0mA VBE(SAT) lC=1.0A, IB=2.0mA VBE(ON) VCE=5.0V, IC=1.0A hFE VCE=5.0V, IC=200mA hFE VCE=5.0V, IC=500mA hFE VCE=5.0V, IC=1.0A hfe VCE=5.0V, IC=50mA, f=1.0kHz fT VCE=5.0V, lC=200mA, f=100MHz Cob VCB=10V, lE=0, f=1.0MHz 2N6548 MIN MAX - 100 - 100 50 40 12 - 1.5 - 2.0 - 2.0 - 2.0 25K 150K 15K 5K 20K 100 - 7.0 50 40 40 12 2.0 0.1 2.0 10 -65 to +150 62.5 12.5 UNITS V V V V A A W W °C °C/W °C/W 2N6549 MIN MAX - 100 - 100 50 40 12 - 1.5 - 2.0 - 2.0 - 2.0 15K 150K 10K 3K 15K 100 - 7.0 UNITS nA nA V V V V V V V MHz pF R1 (23-January 2012) 2N6548 2N6549 NPN SILICON DARLINGTON TRANSISTOR TO-202 CASE -...