2N6552

2N6551 2N6552 2N6553 NPN 2N6554 2N6555 2N6556 PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6551, 2N6554 series types are complementary silicon transistors manufactured by the epitaxial planar process, designed for general purpose audio amplifier applications. MARKING: FULL PART NUMBER TO-202 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD PD TJ, Tstg ΘJA ΘJC 2N6551 2N6552 2N6553 2N6554 2N6555 2N6556 60 80 100 60 80 100 5.0 1.0 2.0 0.1 2.0 10 -65 to +150 62.5 12.5 UNITS V V V A A A W W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO VCB=40V ICBO VCB=60V ICBO VCB=80V IEBO VEB=4.0V BVCBO lC=100μA BVCEO lC=1.0mA BVEBO lE=100μA VCE(SAT) lC=250mA, IB=10mA VCE(SAT) lC=1.0A, IB=100mA VBE(ON) VCE=5.0V, IC=250mA hFE VCE=1.0V, IC=10mA hFE VCE=1.0V, IC=50mA hFE VCE=1.0V, IC=250mA hFE VCE=1.0V, IC=500mA fT VCE=5.0V, lC=100mA, f=20MHz Cob VCB=20V, lE=0, f=1.0MHz 2N6551 2N6554 MIN MAX - 100 --- 100 60 60 5.0 - 0.5 - 1.0 - 1.2 60 80 300 60 25 75 375 - 18 2N6552 2N6555 MIN MAX -- 100 -- 100 80 80 5.0 - 0.5 - 1.0 - 1.2 60 80 300 60 25 75 375 - 18 2...