TPCA8019-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPCA8019-H
High-Efficiency DC/DC Conve...
TPCA8019-H
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPCA8019-H
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications
6.0±0.3
Unit: mm
0.5±0.1 8 1.27 0.4±0.1 5 0.05 M A
Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 15.5 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 2.3 mΩ (typ.) High forward transfer admittance: |Yfs| = 130 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
5.0±0.2
0.15±0.05
1 5.0±0.2 0.95±0.05
4
0.595 A 0.166±0.05
S 1
0.05 S 4 1.1±0.2
0.6±0.1
4.25±0.2
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR
Rating 30 30 ±20 45 135 45 2.8
http://www.DataSheet4U.net/
Unit V V V A W W
8 5
1,2,3:SOURCE 5,6,7,8:DRAIN
4:GATE
0.8±0.1
JEDEC JEITA TOSHIBA
― ― 2-5Q1A
Pulsed (Note 1) (Tc=25℃) (t = 10 s) (Note 2a)
Drain power dissipation Drain power dissipation
Weight: 0.069 g (typ.)
Drain power dissipation
(t = 10 s) (Note 2b)
1.6
W
Circuit Configuration
8 7 6 5
Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range
263 45 3.4 150 −55 to 150
mJ A mJ °C °C
EAR Tch Tstg
1
2
3
3.5±0.2
Absolute Maximum Ratings (Ta = 25°C)
4
N...