2N6578

2N6576 2N6577 2N6578 SILICON NPN DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6576, 2N6577, and 2N6578 are silicon NPN Darlington power transistors designed for general purpose switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Peak Base Current Continuous Emitter Current Peak Emitter Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD TJ, Tstg JC 2N6576 60 60 2N6577 90 90 7.0 15 30 250 500 15.25 30.50 120 -65 to +200 1.46 2N6578 120 120 UNITS V V V A A mA mA A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEV VCE=Rated VCEO, VEB=1.5V ICER VCE=Rated VCEO, RBE=10kΩ, TC=150°C ICEO VCE=Rated VCEO IEBO VEB=7.0V BVCEO IC=200mA (2N6576) 60 BVCEO IC=200mA (2N6577) 90 BVCEO IC=200mA (2N6578) 120 VCE(SAT) IC=10A, IB=100mA VCE(SAT) IC=15A, IB=150mA VBE(SAT) IC=10A, IB=100mA VBE(SAT) IC=15A, IB=150mA hFE VCE=3.0V, IC=400mA 200 hFE VCE=3.0V, IC=4.0A 2.0K hFE VCE=3.0V, IC=10A 500 hFE VCE=4.0V, IC=15A 100 MAX 500 5.0 5.0 1.0 7.5 2.8 4.0 3.5 4.5 20K 5.0K UNITS μA mA mA mA mA V V V V V V V R1 (4-April 2014) 2N6576 2N6577 2N6578 SILICON NPN DARLINGTON P...