AP6924GEY

AP6924GEY Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching Characteristic ▼ Included Schottky Diode SOT-26 G A D K S N-CHANNEL MOSFET WITH SCHOTTKY DIODE BVDSS RDS(ON) A 20V 600mΩ 1A ID Description D A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G S K Absolute Maximum Ratings Symbol VDS VKA VGS ID@TA=25℃ ID@TA=70℃ IDM IF IFM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current3 (MOSFET) Continuous Drain Current (MOSFET) Pulsed Drain Current (MOSFET) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Total Power Dissipation (MOSFET) Total Power Dissipation (Schottky) Storage Temperature Range Operating Junction Temperature Range 1 1 3 http://www.DataSheet4U.net/ Rating 20 20 ±6 1 0.8 8 0.5 2 0.9 0.9 -55 to 125 -55 to 125 Units V V V A A A A A W W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 (MOSFET) Thermal Resistance Junction-ambient (Schottky) 3 Value Max. Max. 110 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200301051 datasheet pdf - http://www.DataSheet4U.net/ AP6924GEY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Cond...