Dual N-Channel MOSFET
AP6902AGH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Fast Switching Performa...
Description
AP6902AGH-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Fast Switching Performance ▼ Two Independent Device ▼ Halogen Free & RoHS Compliant
S1 G1 S2 G2
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D1 (TAB1) D2 (TAB2)
BVDSS RDS(ON) ID
30V 9.2mΩ 52A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. SDPAKTM used APEC innovated package and provides two independent device that is suitable and optimum for DC/DC power application.
SDPAKTM
D1 D2
G1 S1
G2 S2
http://www.DataSheet4U.net/
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 +20 52 13.8 11 50 3 -55 to 150 -55 to 150
Units V V A A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient
3
Value 3 42
Unit ℃/W ℃/W 1 201303041
datasheet pdf - http://www.DataSheet4U.net/
Data and specifications subject to change without notice
AP6902AGH-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Dr...
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