High Speed Infrared Emitting Diodes
VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitte...
Description
VSMY2853RG, VSMY2853G
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
VSMY2853RG VSMY2853G
FEATURES
Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 Peak wavelength: λp = 850 nm High reliability High radiant power
22689
Very high radiant intensity Angle of half intensity: ϕ = ± 28° Suitable for high pulse current operation Terminal configurations: gullwing or reverse gullwing Package matches with detector VEMD2503X01 series Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SurfLightTM
DESCRIPTION
As part of the portfolio, the VSMY2853 series are infrared, 850 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD).
APPLICATIONS
IrDA compatible data transmission Miniature light barrier Photointerrupters Optical switch Emitter source for proximity sensors IR touch panels IR illumination 3D TV
http://www.DataSheet4U.net/
PRODUCT SUMMARY
COMPONENT VSMY2853RG VSMY2853G Ie (mW/sr) 35 35 ϕ (deg) ± 28 ± 28 λp (nm) 850 850 tr (ns) 10 10
Note Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE VSMY2853RG VSMY2853G Note MOQ: minimum order quanti...
Similar Datasheet