CHA6358-99F

CHA6358-99F 27-31.5GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6358-99F is a three stages monolithic HPA that typically provides an output power of 31dBm at 1dB gain compression associated to a high IP3 output of 38.5dBm. It is designed for a wide range of applications, from professional to commercial communication systems The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is available in chip form. Vg1a Vd1a Vg2a Vd2a Vg3a Vd3a RF in RF out Vg1b Vd1b Vg2b Vd2b Vg3b Vd3b Main Features Output power (dBm) ■ Broadband performances: 27-31.5GHz ■ Pout: 31dBm at 1dB compression ■ OIP3: 38.5dBm ■ Linear gain: 22dB ■ DC bias: Vd=6.0Volt@Id=750mA ■ Chip size: 2.5x2.5x0.1mm 36 34 32 30 28 50 40 30 20 10 http://www.DataSheet4U.net/ P-1dB 26 Psat 29 PAE at 1dB 0 27 28 30 31 32 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 Output third order interception point Pout Output Power @1dB comp. Min 27.0 Typ 22 38.5 31 Max 31.5 Unit GHz dB dBm dBm Ref. : DSCHA63583058 - 27 Feb 13 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 PAE (%) datasheet pdf - http://www.DataSheet4U.net/ CHA6358-99F Electrical Characteristics 27-31.5GHz High Power Amplifier Tamb.= +...