AOD482 MOSFET Datasheet

AOD482 Datasheet PDF, Equivalent


Part Number

AOD482

Description

100V N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 6 Pages
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Download AOD482 Datasheet PDF


AOD482
AOD482/AOI482
100V N-Channel MOSFET
General Description
The AOD482/AOI482 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
100V
32A
< 37m
< 42m
TopView
TO252
DPAK
Bottom View
Top View
TO-251A
IPAK
Bottom View
D
DD
DS
G
DG
S
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
http://www.DataSheet4U.net/
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B TC=100°C
TA=25°C
Power Dissipation A TA=70°C
Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IDSM
IAS, IAR
EAS, EAR
PD
PDSM
TJ, TSTG
100
±20
32
22
70
5
4
35
61
100
50
2.5
1.6
-55 to 175
G
D
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
14.2
39
0.8
Max
20
50
1.5
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 2 : July 2011
www.aosmd.com
Page 1 of 6
datasheet pdf - http://www.DataSheet4U.net/

AOD482
AOD482/AOI482
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
100
V
IDSS Zero Gate Voltage Drain Current
VDS=100V, VGS=0V
TJ=55°C
1
µA
5
IGSS Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=250µA
1.6 2.1 2.7
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
70
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=10A
TJ=125°C
30 37
m
63 76
VGS=4.5V, ID=10A
32 42 m
gFS Forward Transconductance
VDS=5V, ID=10A
45 S
VSD Diode Forward Voltage
IS=1A,VGS=0V
0.7 1
V
IS Maximum Body-Diode Continuous Current
54 A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
1300
70
30
0.3
1630
100
50
0.75
2000
130
70
1.1
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
26 34 44 nC
Qg(4.5V) Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=50V, ID=10A
14 18 22 nC
4 6 8 nC
Qgd Gate Drain Charge
http://www.DataSheet4U.net/
5 9 13 nC
tD(on)
Turn-On DelayTime
7 ns
tr Turn-On Rise Time
VGS=10V, VDS=50V, RL=5,
7 ns
tD(off)
Turn-Off DelayTime
RGEN=3
29 ns
tf Turn-Off Fall Time
7 ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs
22 32 42 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
140 200 260 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2 : July 2011
www.aosmd.com
Page 2 of 6
datasheet pdf - http://www.DataSheet4U.net/


Features AOD482/AOI482 100V N-Channel MOSFET Gen eral Description The AOD482/AOI482 comb ines advanced trench MOSFET technology with a low resistance package to provid e extremely low RDS(ON). This device is ideal for boost converters and synchro nous rectifiers for consumer, telecom, industrial power supplies and LED backl ighting. Product Summary VDS ID (at VG S=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100V 32A < 37mΩ < 42mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK TopView Bottom View Top View TO- 251A IPAK D Bottom View D D D G S D S G G D G S S D G S Absolute M aximum Ratings TA=25° C unless otherwi se noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continu ous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Cu rrent C Avalanche energy L=0.1mH C TC=2 5° C Power Dissipation B Power Dissipa tion A TC=100° C TA=25° C TA=70° C J unction and Storage Temperature Range T hermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum J.
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