AOD484

AOD484 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD484 is Pb-free (meets ROHS & Sony 259 specifications). AOD484L is a Green Product ordering option. AOD484 and AOD484L are electrically identical. TO-252 D-PAK Features VDS (V) = 30V ID = 25 A (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 10V) RDS(ON) < 23 mΩ (VGS = 4.5V) UIS Tested! D Top View Drain Connected to Tab G S http://www.DataSheet4U.net/ G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain 25 TC=25°C G Current TC=100°C 25 ID Pulsed Drain Current Avalanche Current C C C Units V V A A mJ W W °C IDM IAR EAR PD PDSM TJ, TSTG 80 15 33 50 25 2.1 1.3 -55 to 175 Repetitive avalanche energy L=0.3mH TC=25°C B Power Dissipation TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 17 55 2.3 Max 25 60 3 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. datasheet pdf - http://www.DataSheet4U.net/ AOD484 Electrical Characteristics (TJ=25°C unless otherwise noted) Paramete...