SBP13009A

SemiWell Semiconductor SBP13009A High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 60ns@8.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A Symbol ○ 2.Collector 1.Base ○ c ○ 3.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching mode power supply. TO-220 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP ＜ 10 ms ) Base Current Base Peak Current ( tP ＜ 10 ms ) Total Dissipation at TC = 25 °C Storage Temperature Max. Operating Junction Temperature http://www.DataSheet4U.net/ Value 700 400 9.0 12 25 6.0 12 100 - 65 ~ 150 150 Units V V V A A A A W °C °C Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Value 1.25 40 Units °C/W °C/W May, 2003. Rev. 3 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/6 datasheet pdf - http://www.DataSheet4U.net/ SBP13009A Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 °C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA ...