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Si4134DY
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30
RDS(on) (Ω) MAX. 0.0140 at VGS = 10 V 0.0175 at VGS = 4.5 V
ID (A) a 14 12.5
Qg (TYP.) 7.3 nC
SO-8 Single D D5 D6 D7 8
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Available
APPLICATIONS
• DC/DC conversion - Notebook system power
D
4 3G 2S 1S S Top View
Ordering Information: Si4134DY-T1-E3 (lead (Pb)-free) Si4134DY-T1-GE3 (lead (Pb)-free and halogen-free)
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
TC = 25 °C
VDS VGS
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C TA = 70 °C
ID
Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IDM IS
Single Pulse Avalanche Current Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
IAS EAS
PD
TJ, Tstg
LIMIT 30 ± 20 14 11.2
9.9 b, c 7.9 b, c
50 4.1 2 b, c 15 11.25 5 3.2 2.5 b, c 1.6 b, c -55 to +150
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient b, d
t ≤ 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes
a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 °C/W.
SYMBOL RthJA RthJF
TYPICAL 38 20
MAXIMUM 50 25
UNIT °C/W
S15-2154-Rev. D, 07-Sep-15
1
Document Number: 68999
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Si4134DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a Dynamic b
VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
ID = 250 μA
VDS = VGS , ID = 250 μA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 7 A VDS = 15 V, ID = 10 A
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Total Gate Charge
Ciss Coss Crss
Qg
VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A
Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics
Qgs Qgd Rg td(on)
tr td(off)
tf td(on)
tr td(off)
tf
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current a
ISM
Body Diode Voltage
VSD IS = 3 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge Reverse Recovery Fall Time
Qrr ta
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
MIN.
30 1.2 20 -
0.2 -
-
TYP. MAX. UNIT
33 -5 1.8 0.0115 0.0145 24
2.5 ± 100 1 10 0.0140 0.0175 -
V mV/°C
V nA μA A Ω S
846 187 72 15.4 23 7.3 11 2.3 2.2 0.8 1.6 15 30 12 24 13 26 10 20
9 18 9 18 14 28 8 16
pF nC Ω
ns
0.78 17 9.5 10 7
4.2 50 1.2 34 19 -
A
V ns nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
S15-2154-Rev. D, 07-Sep-15
2
Document Number: 68999
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
Si4134DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50 VGS = 10 V thru 5 V
8
40 VGS = 4 V 6
I D - Drain Current (A)
I D - Drain Current (A)
30
20
10
0 0.0
VGS = 3 V
0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V)
Output Characteristics
2.5
4
TC = 25 °C
2 TC = 125 °C TC = - 55 °C
0 01234 VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
5
R DS(on) - On-Resista.