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SI4134DY Dataheets PDF



Part Number SI4134DY
Manufacturers Vishay
Logo Vishay
Description N-Channel MOSFET
Datasheet SI4134DY DatasheetSI4134DY Datasheet (PDF)

www.vishay.com Si4134DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. 0.0140 at VGS = 10 V 0.0175 at VGS = 4.5 V ID (A) a 14 12.5 Qg (TYP.) 7.3 nC SO-8 Single D D5 D6 D7 8 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Available APPLICATIONS • DC/DC conversion - Notebook system power D 4 3G 2S 1S S Top View Ordering Information: Si4.

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www.vishay.com Si4134DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. 0.0140 at VGS = 10 V 0.0175 at VGS = 4.5 V ID (A) a 14 12.5 Qg (TYP.) 7.3 nC SO-8 Single D D5 D6 D7 8 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Available APPLICATIONS • DC/DC conversion - Notebook system power D 4 3G 2S 1S S Top View Ordering Information: Si4134DY-T1-E3 (lead (Pb)-free) Si4134DY-T1-GE3 (lead (Pb)-free and halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage TC = 25 °C VDS VGS Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C ID Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IDM IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range IAS EAS PD TJ, Tstg LIMIT 30 ± 20 14 11.2 9.9 b, c 7.9 b, c 50 4.1 2 b, c 15 11.25 5 3.2 2.5 b, c 1.6 b, c -55 to +150 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b, d t ≤ 10 s Maximum Junction-to-Foot (Drain) Steady State Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 85 °C/W. SYMBOL RthJA RthJF TYPICAL 38 20 MAXIMUM 50 25 UNIT °C/W S15-2154-Rev. D, 07-Sep-15 1 Document Number: 68999 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com Si4134DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Dynamic b VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 μA ID = 250 μA VDS = VGS , ID = 250 μA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 7 A VDS = 15 V, ID = 10 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Ciss Coss Crss Qg VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = 15 V, VGS = 4.5 V, ID = 10 A f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω Continuous Source-Drain Diode Current IS TC = 25 °C Pulse Diode Forward Current a ISM Body Diode Voltage VSD IS = 3 A Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Qrr ta IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C Reverse Recovery Rise Time tb Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. MIN. 30 1.2 20 - 0.2 - - TYP. MAX. UNIT 33 -5 1.8 0.0115 0.0145 24 2.5 ± 100 1 10 0.0140 0.0175 - V mV/°C V nA μA A Ω S 846 187 72 15.4 23 7.3 11 2.3 2.2 0.8 1.6 15 30 12 24 13 26 10 20 9 18 9 18 14 28 8 16 pF nC Ω ns 0.78 17 9.5 10 7 4.2 50 1.2 34 19 - A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2154-Rev. D, 07-Sep-15 2 Document Number: 68999 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com Si4134DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 VGS = 10 V thru 5 V 8 40 VGS = 4 V 6 I D - Drain Current (A) I D - Drain Current (A) 30 20 10 0 0.0 VGS = 3 V 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) Output Characteristics 2.5 4 TC = 25 °C 2 TC = 125 °C TC = - 55 °C 0 01234 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 5 R DS(on) - On-Resista.


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