TK12A55D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
TK12A55D
Switching Regulator Applicatio...
TK12A55D
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOS VII)
TK12A55D
Switching
Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.48 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 550 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
3.9 3.0 15.0 ± 0.3
1.14 ± 0.15
2.8 MAX. 13 ± 0.5
2.6 ± 0.1 4.5 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
550
V
±30
V
12 A
48
45
W
317
mJ
12
A
4.5
mJ
150
°C
−55 to 150
°C
0.69 ± 0.15 Ф0.2 M A
2.54
2.54
123
0.64 ± 0.15
1: Gate 2: Drain 3: Source
JEDEC
⎯
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba ...