2N6661

Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ►►Free from secondary breakdown ►►Low power drive requirement ►►Ease of paralleling ►►Low CISS and fast switching speeds ►►Excellent thermal stability ►►Integral source-drain diode ►►High input impedance and high gain ►►Hi-Rel processing available General Description The Supertex 2N6661 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►►Motor controls ►► Converters Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and a...