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JS28F512M29EWLx Data Sheet

3 V supply flash memory

Download JS28F512M29EWLx Datasheet

JS28F512M29EWLx
Numonyx™ Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block) 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program — 512-word program buffer Programming time — 0.88 µs per byte (1.14MB/s) typical when using full buffer size in buffer program Memory organization — Uniform blocks, 128 Kbytes/64 Kwords each Program/Erase controller — Embedded byte/word program algorithms Program/ Erase Suspend and Resume — Read from any block during Program Suspend — Read and Program another block during Erase Suspend Blank Check to verify an erased block „ „ „ „ http://www.DataSheet4U.net/ „ „ „ „ „ „ Unlock Bypass/Block Erase/Chip Erase/Write to Buffer — Faster Buffered/Batch Programming — Faster Block and Chip E.
JS28F512M29EWLx

Download JS28F512M29EWLx Datasheet
Numonyx™ Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, uniform block) 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); 110 ns (TSOP) Buffer Program — 512-word program buffer Programming time — 0.88 µs per byte (1.14MB/s) typical when using full buffer size in buffer program Memory organization — Uniform blocks, 128 Kbytes/64 Kwords each Program/Erase controller — Embedded byte/word program algorithms Program/ Erase Suspend and Resume — Read from any block during Program Suspend — Read and Program another block during Erase Suspend Blank Check to verify an erased block „ „ „ „ http://www.DataSheet4U.net/ „ „ „ „ „ „ Unlock Bypass/Block Erase/Chip Erase/Write to Buffer — Faster Buffered/Batch Programming — Faster Block and Chip Erase Vpp/WP# pin protection — Protects first or last block regardless of block protection settings Software protection — Volatile Protection — Non-Volatile Protection — Password Protection — Password Access Extended Memory block — 128-word/256-byte block for permanent, secure identification. — can be programmed and locked by factory or by the customer Low power consumption — Standby Minimum 100,000 Program/Erase cycles per block ETOXTM* X (65nm) MLC technology Fortified BGA and TSOP packages JES.


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