N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP73T03AGM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement
D ...
Description
AP73T03AGM-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Lower On-resistance ▼ Simple Drive Requirement
D D D D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON)
G
30V 9.5mΩ 12.5A
▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free
SO-8
S S S
ID
Description
AP73T03A series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The SO-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
D
G S
Absolute Maximum Ratings
http://www.DataSheet4U.net/
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Rating 30 +20 12.5 10 50 2.5 -55 to 150 -55 to 150
Units V V A A A W ℃ ℃
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient
3
Value 50
Unit ℃/W 1 201304231
datasheet pdf - http://www.DataSheet4U.net/
Data and specifications subject to change without notice
AP73T03AGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source ...
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