PMT760EN

PMT760EN 25 October 2012 100 V N-channel Trench MOSFET Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1.3 Applications Relay driver LED backlight driver Low-side loadswitch Switching circuits http://www.DataSheet4U.net/ 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 0.8 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ - Max 100 20 1.3 Unit V V A Static characteristics drain-source on-state resistance [1] 2 - 760 950 mΩ Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . Scan or click this QR code to view the latest information for this product datasheet pdf - http://www.DataSheet4U.net/ NXP Semiconductors PMT760EN 100 V N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 Pinning information Symbol Description G D S D gate drain source drain 1 2 3 Simplified outline 4 Graphic symbol D G S 017aaa253 SC-73 (SOT223) 3. Ordering information Table 3. Ordering information Package Name PMT760EN SC-73 Description plastic surface-mounted package wi...