TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/537 Devices 2N6674 2N6675 2N6689 2N6690 Qualifie...
TECHNICAL DATA
NPN POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/537 Devices 2N6674 2N6675 2N6689 2N6690 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Symbol VCEO VCBO VCEX VEBO IB IC 2N6674 2N6675 2N6689 2N6690 300 400 450 650 450 650 7.0 5.0 15 2N6674 2N6689 2N6675 2N6690 6.0(2) 3.0(3) 175 175 -65 to +200 Max. 1.0 Unit Vdc Vdc Vdc Vdc Adc Adc
2N6674, 2N6675 TO-3 (TO-204AA)*
@ TA = +250C @ TC = +250C(1) Operating & Storage Temperature Range Total Power Dissipation
PT Top; Tstg Symbol RθJC
W W 0 C Unit C/W
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 1.0 W/0C for TC > 250C 2) Derate linearly 34.2 mW/0C for TA > 250C 3) Derate linearly 17.1 mW/0C for TA > 250C
0
2N6689, 2N6690 TO-61*
* See Appendix A for Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 200 mAdc Collector-Emitter Cutoff Current VCE = 450 Vdc, VBE = -1.5 Vdc VCE = 650 Vdc, VBE = -1.5 Vdc 2N6674, 2N6689 2N6675, 2N6690 2N6674, 2N6689 2N6675, 2N6690 V(BR)CEO 300 400 0.1 0.1 Vdc
ICEX
mAdc
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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2N6674, 2N6675, 2N6689, 2N6690 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics E...