NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot=...
NPN SILICON PLANAR MEDIUM POWER
TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt
2N6714 2N6715
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 40 30 5 2 1 1
E-Line TO92 Compatible 2N6714 2N6715 50 40 UNIT V V V A A W °C
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector Base Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE fT CCB 55 60 50 50 40 30 5 0.1 0.1 0.5 1.2 55 60 50 50 2N6714 MIN. 50 40 5 0.1 0.1 0.5 1.2 2N6715 MAX. V V V
µA µA µA
UNIT
CONDITIONS. IC=1mA, IE=0 IC=10mA, IB=0* IE=1mA, IC=0 VCB=40V, IE=0 VCB=50V, IE=0 VEB=5V, IC=0 IC=1A, IB=100mA* IC=1A, VCE=1V* IC=10mA, VCE=1V* IC=100mA, VCE=1V* IC=1A, VCE=1V*
MAX. MIN.
V V
250 500 30
250 500 30 MHz pF
IC=50mA, VCE=10V VCE=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-5
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