NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * P...
NPN SILICON PLANAR MEDIUM POWER
TRANSISTORS
ISSUE 1 MARCH 94 FEATURES * 100 Volt VCEO * Gain of 20 at IC = 0.5 Amp * Ptot=1 Watt
2N6716 2N6717 2N6718
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25°C SYMBOL 2N6716 VCBO VCEO VEBO ICM IC Ptot 60 60 2N6717 80 80 5 2 1 1
E-Line TO92 Compatible 2N6718 100 100 UNIT V V V A A W °C
Operating and Storage Temperature Range Tj:Tstg
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Collector Base Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE fT CCB 80 50 20 50 2N6716 60 60 5 1 1 0.5 0.35 1.2 250 500 30 80 50 20 50 2N6717 80 80 5 1 1 0.5 0.35 1.2 250 500 30 80 50 20 50 2N6718 100 100 5 UNIT CONDITIONS. V V V
µA µA µA µA
MIN. MAX MIN. MAX MIN. MAX IC=0.1mA, IE=0 IC=1mA, IB=0* IE=1mA, IC=0 VCB=60V, IE=0 VCB=80V, IE=0 VCB=100V, IE=0 VEB=5V, IC=0 IC=250mA, IB=10mA* IC=250mA,IB=25mA* IC=250mA, VCE=1V* IC=50mA, VCE=1V* IC=250mA, VCE=1V* IC=500mA, VCE=1V* MHz IC=50mA, VCE=10V pF VCE=10V, f=1MHz
1 1 0.5 0.35 1.2 250 500 30
V V
*Measured under pulsed con...