NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * Gain of 100 at IC = 350 mA * Pto...
NPN SILICON PLANAR MEDIUM POWER
TRANSISTOR
ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * Gain of 100 at IC = 350 mA * Ptot=1 Watt
2N6731
C B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
E-Line TO92 Compatible VALUE 100 80 5 2 1 1 -55 to +200 UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 100 80 5 0.1 10 0.35 1.0 100 100 50 TYP. MAX. UNIT V V V
µA µA
CONDITIONS. IC=100µ A, IE=0 IC=10mA, IB=0* IE=1mA, IC=0 VCB=80V, IE=0 VEB=5V, IC=0 IC=350mA, IB=35mA* IC=350mA, VCE=2V* IC=10mA, VCE=2V* IC=350mA, VCE=2V*
Emitter Cut-Off Current IEBO VCE(sat) VBE(on)
V V
Static Forward Current hFE Transfer Ratio Transition Frequency Collector-Base Capacitance fT CCB
300 500 20 MHz pF
IC=200mA, VCE=5V f=20MHz VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-10
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