MBR35100

Naina Semiconductor Ltd. Schottky Power Diode, 35A Features Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity MBR3545 thru MBR35100R DO-203AA (DO-4) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, half-sine wave Forward voltage TC ≤ 110 C TC = 25oC IF = 35 A TJ = 25oC VR = 20V, TJ = 25oC VR = 20V, TJ = 125oC o VRRM VRMS VDC IF IFSM VF 45 32 45 35 600 http://www.DataSheet4U.net/ 60 42 60 35 600 0.75 1.5 25 80 57 80 35 600 0.84 1.5 25 100 70 100 35 600 0.84 1.5 V V V A A V 0.68 1.5 Reverse current IR 25 25 mA Thermal & Mechanical Specifications (TJ = 25oC, unless otherwise noted) Parameters Symbol MBR3545(R) MBR3560(R) MBR3580(R) MBR35100(R) Unit o Maximum thermal resistance, junction to case Operating junction temperature range Storage temperature Mounting torque (non-lubricated threads) Approximate allowable weight Rth(JC) TJ Tstg F W 1.5 -55 to 150 -55 to 175 2.0 5.0 C/ W o C o C g Nm 1 D-95, Sector 63, Noida – 201301, India Tel: 0120-4205450 Fax: 0120-4273653 [email protected] www.nainasemi.com datasheet pdf - http://www.DataSheet4U.net/ Naina Semiconductor Ltd. Package Outline MBR3545 thru MBR35100R http://www.DataSheet4U.net/ ALL DIMENSIO...